Characterization of Zn-alloyed CdTe compound semiconductors processed in microgravity on USML-1 and USML-2-Reference-Cited by-同舟云学术

Characterization of Zn-alloyed CdTe compound semiconductors processed in microgravity on USML-1 and USML-2

Published:1998-01 Issue:8 Volume:22 Page:1179-1188
ISSN:0273-1177
Container-title:Advances in Space Research
language:en
Short-container-title:Advances in Space Research

Author:

Larson D.J.,Dudley M.,Chung H.,Raghothamachar B.

Publisher

Elsevier BV

Subject

Space and Planetary Science,Aerospace Engineering,General Earth and Planetary Sciences,Atmospheric Science,Geophysics,Astronomy and Astrophysics

Reference13 articles.

1. The Origins of Twinning in CdTe;Vere;J. Electron. Mater.,1983

2. Thermal Activation Analysis of Dislocation Motion in CdTe;Gutmanas;Phys. Status. Solidi. A,1981

3. Crystal Growth and Steady-State Segregation under Zero Gravity: InSb;Witt;J. Electrochem. Soc.,1975

4. X-ray Topography;Dudley,1993

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