Low temperature molecular beam epitaxy of Al(Ga)InAs on InP and its application to high electron mobility transistor structures
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference9 articles.
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3. Low-temperature MBE-grown In0.52Ga0.18Al0.30As/InP optical waveguides
4. The growth and characterization of nominally undoped Al1−xInxAs grown by molecular beam epitaxy
5. 20th Int. Conf. on GaAs and Related Compounds;Hoenow,1993
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low-temperature MBE growth and characteristics of InP-based AlInAs/GaInAs MQW structures;Journal of Crystal Growth;2001-07
2. Temperature-graded InAlAs buffers applied on InGaAs/InAlAs/InP high electron mobility transistor heterostructures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
3. Low temperature MBE grown AlInAs: Investigation of current voltage and low frequency noise behaviour of schottky diodes;Solid-State Electronics;1997-06
4. Composition inhomogeneities in the buffer layers of In0.52Al0.48As/InxGa1−xAs/InP multiquantum well structures driven by In segregation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-05
5. Highly strained In0.5Ga0.5P as wide-gap material on InP substrate for heterojunction field effect transistor application;Journal of Crystal Growth;1994-12
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