Copper doping of GaSb single crystals-Reference-Cited by-同舟云学术

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Copper doping of GaSb single crystals

Published:1994-12 Issue:1-3 Volume:28 Page:138-141
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Šestáková V.,Štěpánek B.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference27 articles.

1. Czochralski grown concentration profiles in the undoped and Te-doped GaSb single crystals

2. Growth properties of GaSb: The structure of the residual acceptor centres

3. Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy

4. Formation of semi-insulating InP through metallic Cu-rich precipitates

5. A New Type of Semi-Insulating Materials

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Estimation of doping limit of some elements in GaSb single crystals;International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications;1999-03-24

2. Doping limits and growth thermodynamics of GaSb crystals;Journal of Thermal Analysis and Calorimetry;1999

3. Diffusion mobility and defect analysis in GaSb;Journal of Crystal Growth;1998-05

4. Doping limit of some elements in GaSb;Czechoslovak Journal of Physics;1998

5. Extrinsic Defects;Charged Semiconductor Defects

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