Dynamics of partial dislocations in silicon
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference18 articles.
1. Why Silicon Is Hard
2. Dislocation dissociation widths in silicon at low temperature under controlled high-stress orientations
3. Constricted dislocations and their use for TEM measurements of the velocities of edge and 60° dislocations in silicon. A new approach to the problem of kink migration
4. Dislocation Kink Motion in Silicon
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1. Molecular dynamics studies of the dissociated screw dislocation in silicon;Journal of Physics: Condensed Matter;2010-02-03
2. First principles simulations of kink defects on the SP 90° partial dislocation in silicon;Progress in Materials Science;2007-02
3. MeV N+-ion irradiation effects on α‐MoO3 thin films;Journal of Applied Physics;2007-02
4. Tight-Binding Theory in the Computational Materials Science;MATERIALS TRANSACTIONS;2001
5. Ab initiotight binding;Journal of Physics: Condensed Matter;1999-12-13
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