Basic dislocation contrasts in SEM-CL/EBIC on III–V semiconductors-Reference-Cited by-同舟云学术

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Basic dislocation contrasts in SEM-CL/EBIC on III–V semiconductors

Published:1994-05 Issue:1-3 Volume:24 Page:115-120
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Schreiber J.,Hildebrandt S.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. A contribution to the theory of beam‐induced current characterization of dislocations

2. Studies on carrier recombination at dislocations in compound semiconductors by combined SEM-CL/EBIC measurements

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