Diffusion of tellurium in silicon studied by the redistribution of an implanted source of radioactive 121Te
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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1. Identification of Chalcogen Point-Defect Sites in Silicon by Total-Energy Calculations
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4. Diffusion of gold in dislocation-free or highly dislocated silicon measured by the spreading-resistance technique
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1. Supersaturating silicon with transition metals by ion implantation and pulsed laser melting;Journal of Applied Physics;2013-09-28
2. The role of diffusion in broadband infrared absorption in chalcogen-doped silicon;Applied Physics A;2009-03-25
3. Chalcogen doping of silicon via intense femtosecond-laser irradiation;Materials Science and Engineering: B;2007-02
4. Chalcogens;Computational Microelectronics;2004
5. Diffusion of sulfur‐35 into silicon using an elemental vapor source;Applied Physics Letters;1993-07-26
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