Supersaturating silicon with transition metals by ion implantation and pulsed laser melting-Reference-Cited by-同舟云学术

Supersaturating silicon with transition metals by ion implantation and pulsed laser melting

Published:2013-09-28 Issue:12 Volume:114 Page:124903
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Recht Daniel,Smith Matthew J.,Charnvanichborikarn Supakit,Sullivan Joseph T.,Winkler Mark T.,Mathews Jay,Warrender Jeffrey M.,Buonassisi Tonio,Williams James S.,Gradečak Silvija,Aziz Michael J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4821240

Reference62 articles.

1. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

2. The Intermediate Band Solar Cell: Progress Toward the Realization of an Attractive Concept

3. Metal Impurities in Silicon-Device Fabrication

4. Electron-Hole Recombination in Germanium

5. Statistics of the Recombinations of Holes and Electrons

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