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Homogeneity of carbon microdistribution in edge-defined film-fed grown polycrystalline silicon

  • Published:1993-03 Issue:2 Volume:18 Page:122-128
  • ISSN:0921-5107
  • Container-title:Materials Science and Engineering: B
  • language:en
  • Short-container-title:Materials Science and Engineering: B

Author:

Pivac B.,Borghesi A.,Amiotti M.,Sassella A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference27 articles.

1. Proc. Symp. on the Electronic and Optical Properties of Polycrystalline or Impure Semiconductors and Novel Silicon Growth Methods;Kalejs,1981

2. Silicon Processing for Photovoltaics II;Kalejs,1987

3. Proc. 15th IEEE Photovoltaic Specialists' Conf.;Ravi,1981

4. Proc. 3rd Commission of the European Communities Conf. on Photovoltaic Solar Energy;Macintosh,1980

5. Proc. 15th IEEE Photovoltaic Specialists' Conf.;Taylor,1981

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2. Dislocation-related deep levels in carbon rich p-type polycrystalline silicon;Solar Energy Materials and Solar Cells;2007-06

3. Oxygen-related deep levels in oxygen doped EFG poly-Si;Materials Science and Engineering: B;2000-02

4. Non-doping light impurities in silicon for solar cells;Materials Science and Engineering: B;1996-01

5. Non-doping light impurities in silicon for solar cells;C,H,N and O in Si and Characterization and Simulation of Materials and Processes;1996
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