Low frequency noise as a characterization tool for InP- and GaAs-based double-barrier resonant tunnelling diodes-Reference-Cited by-同舟云学术

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Low frequency noise as a characterization tool for InP- and GaAs-based double-barrier resonant tunnelling diodes

Published:1993-06 Issue:1-2 Volume:20 Page:207-213
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Deen M.J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. Physics and Applications of Quantum Wells and Superlattices,1987

2. A new resonant-tunnel diode-based multivalued memory circuit using a MESFET depletion load

3. Analysis of defect-assisted tunneling based on low frequency noise measurements of resonant tunnel diodes

4. Low frequency noise studies of AlAs — GaAs — AlAs quantum well diodes at 77 K

5. Proc. Int. Conf. on Noise in Physical Systems and 1/ƒ Fluctuations;Deen,1991

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3. Preface;Specular Gloss;2008

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