Photoluminescence characterization of structures obtained by multipolar plasma oxidation of InP
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. Passivation des semiconducteurs III-V
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5. Large Schottky barrier heights onn‐InP−A novel approach
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical and gated photoluminescence intensity studies on Schottky and oxidized Schottky structures;Thin Solid Films;1999-03
2. Photoluminescence intensity study of n-InP diodes in the accumulation regime;Physica Status Solidi (a);1996-07-16
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