Growth and characterization of metal-organic vapour phase epitaxial Ga1−xInxAsySb1−y quaternary layers-Reference-Cited by-同舟云学术

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Growth and characterization of metal-organic vapour phase epitaxial Ga1−xInxAsySb1−y quaternary layers

Published:1991-07 Issue:1-3 Volume:9 Page:121-124
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Giani A.,Bougnot J.,Pascal-Delannoy F.,Bougnot G.,Kaoukab J.,Allogho G.G.,Bow M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. The Search for Very Low Loss Fiber-Optic Materials

2. Unstable Region in Quaternary In1-xGaxAs1-ySbyCalculated Using Strictly Regular Solution Approximation

3. Miscibility gaps in quaternary III/V alloys

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Combination of IBA Techniques for Composition Analysis of GaInAsSb Films;Materials Science Forum;2006-05

2. Ion beam analysis of GaInAsSb films grown by MOVPE on GaSb;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-12

3. Thermodynamic analysis of the Ga–In–As–Sb–C–H system;Journal of Crystal Growth;1999-11

4. Recent progress in GaInAsSb thermophotovoltaics grown by organometallic vapor-phase epitaxy;Journal of Crystal Growth;1998-12

5. OMVPE growth of GaInAsSb in the 2–2.4μm range;Journal of Crystal Growth;1998-08

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