Ion beam analysis of GaInAsSb films grown by MOVPE on GaSb
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference13 articles.
1. Growth and characterization of metal-organic vapour phase epitaxial Ga1−xInxAsySb1−y quaternary layers
2. Liquid phase epitaxial growth of InGaAsSb on (111)B InAs
3. Liquid phase epitaxial Ga1-xInxAsySb1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range
4. 2.5 μm GaInAsSb lattice‐matched to GaSb by liquid phase epitaxy
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