Low power pulsed laser annealing of Zn+-implanted InP: first endeavours-Reference-Cited by-同舟云学术

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Low power pulsed laser annealing of Zn+-implanted InP: first endeavours

Published:1996-03 Issue:1-2 Volume:38 Page:72-75
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Vitali G.,Rossi M.,Pizzuto C.,Zollo G.,Kalitzova M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Gallium Arsenide;Welch,1985

2. Properties of InP Datareview;Bouley,1991

3. The evaporation of GaAs under equilibrium and non-equilibrium conditions using a modulated beam technique

4. Time and temperature dependences of phosphorus evolution from InP

5. Experimental Conditions Required to Achieve Low-Power Pulsed-Laser Annealing of Implanted GaAs

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Migration barriers of neutral As di-interstitials in GaAs;New Journal of Physics;2012-05-25

2. Structural Change;Laser Processing of Engineering Materials;2005

3. Temperature and ion flux dependence of damage structures in Zn+ implanted and laser annealed GaAs;Journal of Physics D: Applied Physics;2002-10-22

4. High resolution transmission electron microscopy of elevated temperature Zn+ implanted and low-power pulsed laser annealed GaAs;Journal of Applied Physics;2000-08-15

5. Electrical carrier activation in Zn+ implanted and low-power pulsed-laser annealed InP in nitrogen atmosphere;Journal of Materials Science: Materials in Electronics;1999

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