Influence of thermal history during Czochralski silicon crystal growth on OISF nuclei formation
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference21 articles.
1. Thermally induced stacking faults distributed inhomogeneously in Czochralski silicon crystals
2. Formation Process of Stacking Faults with Ringlike Distribution in CZ-Si Wafers
3. Reduction of Surface Stacking Faults on N‐Type <100> Silicon Wafers
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thermal History Index as a bulk quality indicator for Czochralski solar wafers;Solar Energy Materials and Solar Cells;2016-12
2. Determination of Oxygen Concentration in Heavily Doped Silicon Wafer by La-ser Induced Breakdown Spectroscopy;Journal of Inorganic Materials;2010-07-29
3. Enhanced Oxygen Precipitation during the Czochralski Crystal Growth;Solid State Phenomena;2007-10
4. Influence of Czochralski silicon crystal growth on wafer quality: an extensive investigation using traditional and new characterization techniques;Materials Science and Engineering: B;2000-04
5. Ring-Related Defects in MCZ Wafer Comparison by Electrical, Structural, and Device Properties;MRS Proceedings;1997
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