Seeding recrystallization for producing thick silicon-on-insulator films on non-planar substrates
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference18 articles.
1. Current status of the technology of silicon separated by implantation of oxygen
2. Use of selective annealing for growing very large grain silicon on insulator films
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Soi Materials;Silicon-on-Insulator Technology: Materials to VLSI;2004
2. SOI Materials;Silicon-on-Insulator Technology: Materials to VLSI;1997
3. Low frequency noise investigations for evaluation of silicon-on-insulator films obtained by zone-melting recrystallization;Materials Science and Engineering: B;1993-03
4. Completely dielectrically isolated silicon for high voltage applications produced by zone melting recrystallization of polycrystalline Si on SiO2;Materials Science and Engineering: B;1992-10
5. SOI Materials;Silicon-on-Insulator Technology;1991
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