A study of carbon-implanted silicon for light-emitting diode fabrication-Reference-Cited by-同舟云学术

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A study of carbon-implanted silicon for light-emitting diode fabrication

Published:1989-10 Issue:1-4 Volume:4 Page:95-99
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Canham L.T.,Dyball M.R.,Barraclough K.G.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 µm

2. 1.3‐μm light‐emitting diode from silicon electron irradiated at its damage threshold

3. Projected Range Statistics;Gibbons,1975

4. Tables of Ion Implantation Spatial Distributions;Burenkov,1986

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2. Comparative Study of Oxygen- and Carbon-Related Defects in Electron Irradiated Cz–Si Doped with Isovalent Impurities;Applied Sciences;2022-08-15

3. Optical properties of an ensemble of G-centers in silicon;Physical Review B;2018-01-09

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