The formation of dislocations and their in-situ detection during silicon vapour phase epitaxy at reduced temperature-Reference-Cited by-同舟云学术

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The formation of dislocations and their in-situ detection during silicon vapour phase epitaxy at reduced temperature

Published:1989-10 Issue:1-4 Volume:4 Page:417-422
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Pidduck A.J.,Robbins D.J.,Young I.M.,Cullis A.G.,Martin A.S.R.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. New approach to the kinetics of silicon vapor phase epitaxy at reduced temperature

2. In-situ light scattering studies of substrate cleaning and layer nucleation in silicon MBE

3. Proc. Conf. U.K. IT 88;Pickering,1988

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