Quality of molecular-beam-epitaxy-grown GaAs on Si(100) studied by ellipsometry-Reference-Cited by-同舟云学术

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Quality of molecular-beam-epitaxy-grown GaAs on Si(100) studied by ellipsometry

Published:1990-01 Issue:2 Volume:5 Page:309-312
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Rossow U.,Fieseler T.,Zahn D.R.T.,Richter W.,Woolf D.A.,Westwood D.I.,Williams R.H.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference9 articles.

1. Polar-on-nonpolar epitaxy

2. J. C. C. Fan and J. M. Poate (eds.), Heteroepitaxy on Silicon, MRS Symp. Proc. 67.

3. J. C. C. Fan, J. M. Phillips and B. Y Tsaur (eds.), Heteroepitaxy on Silicon II, MRS Symp. Proc. 91.

4. D. A. Woolf, D. I. Westwood and R. H. Williams, submitted to Semicond. Sci. Technol.

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Depolarization/mixed polarization corrections of ellipsometry spectra;Thin Solid Films;1998-02

2. Effect of NaOCl-Polishing on Metal Organic Chemical Vapor Deposition grown GaAs Surface on Si Substrate by Spectroscopic Ellipsometry and Atomic Force Microscopy;Japanese Journal of Applied Physics;1997-05-15

3. Characterization of MOCVD-grown GaAs on Si by spectroscopic ellipsometry;Applied Surface Science;1996-07

4. Defect reduction in GaAs and InP grown on planar Si(111) and on patterned Si(001) substrates;Journal of Crystal Growth;1994-12

5. The characterisation of GaAs on silicon using polarised laser light;Advanced Materials for Optics and Electronics;1992-08

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