The characterisation of GaAs on silicon using polarised laser light-Reference-Cited by-同舟云学术

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The characterisation of GaAs on silicon using polarised laser light

Published:1992-08 Issue:4 Volume:1 Page:189-195
ISSN:1057-9257
Container-title:Advanced Materials for Optics and Electronics
language:en
Short-container-title:Adv. Mater. Opt. Electron.

Author:

Morris I. L.,Jenkins T. E.,Goodes S. R.

Publisher

Wiley

Subject

General Chemical Engineering,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Steps on (001) silicon surfaces

2. Characterization of the MBE growth of GaAs/Si(100) as a function of epilayer thickness

3. A semi-automatic method for the determination of the refractive index of solids

4. Optical and Mechanical RMS Surface Roughness Comparison

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multiple-angle-of-incidence ellipsometry;Journal of Physics D: Applied Physics;1999-01-01

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