Science and technology of interfaces-Reference-Cited by-同舟云学术

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Science and technology of interfaces

Published:1990-06 Issue:2-3 Volume:6 Page:69-76
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Keramidas Vassilis G.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. Interfaces in eptaxial metal-compound semiconductor heterostructures;Sands;Mater. Sci. Eng.,1990

2. InAs strained-layer quantum wells with band gaps in the 1.2–1.6 μm wavelength range;de Miguel;Appl. Phys. Lett.,1988

3. Optical investigations of the band structure of strained InAsAlInAs quantum wells;Meynadier;Appl. Phys. Lett.,1988

4. Molecular-beam epitaxial growth and characterization of pseudomorphic InAsIn0.52Al0.48As quantum wells;de Miguel;J. Vac. Sci. Technol., B,1988

5. High-efficiency carrier collection and stimulated emission in thin (50 Å) pseudomorphic InxGa1 − xAs quantum wells;Anderson;Appl. Phys. Lett.,1986

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanical properties of amorphous and polycrystalline multilayer systems;Surface and Coatings Technology;1993-10

2. Strain relaxation in epitaxial overlayers;Journal of Electronic Materials;1991-07

3. Misfit dislocation generation in epitaxial layers;Critical Reviews in Solid State and Materials Sciences;1991-01

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