InAs strained‐layer quantum wells with band gaps in the 1.2–1.6 μm wavelength range
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99264
Reference11 articles.
1. Defects in epitaxial multilayers
2. High‐efficiency carrier collection and stimulated emission in thin (50 Å) pseudomorphic InxGa1−xAs quantum wells
3. Optical investigations of the band structure of strained InAs/AlInAs quantum wells
4. Reduction of lasing threshold current density by the lowering of valence band effective mass
5. Nucleation and strain relaxation at the InAs/GaAs(100) heterojunction
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1. InAs self‐assembled quantum dots on InP by molecular beam epitaxy;Applied Physics Letters;1996-02-12
2. Growth and characterization of short-period strained-layer superlattices grown by almbe;Solid-State Electronics;1996-01
3. Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures;Applied Physics Letters;1996-01
4. Time‐resolved investigations of excitonic recombination in highly strained InAs/Al0.48In0.52As quantum wells;Journal of Applied Physics;1994-07
5. Surfactant-mediated molecular beam epitaxy of strained layer semiconductor heterostructures;Thin Solid Films;1993-08
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