Study of tungsten and WSi refractory ohmic contacts to graded-gap InGaAs/GaAs/AlGaAs heterostructures-Reference-Cited by-同舟云学术

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Study of tungsten and WSi refractory ohmic contacts to graded-gap InGaAs/GaAs/AlGaAs heterostructures

Published:1990-12 Issue:3 Volume:7 Page:231-235
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Lahav Alex,Genut Menachem

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off process

2. High-performance AlGaAs/GaAs HBT's utilizing proton-implanted buried layers and highly doped base layers

3. AlGaAs/GaAs heterojunction bipolar transistors with small size fabricated by a multiple self-alignment process using one mask

4. An (Al,Ga)As/GaAs heterostructure bipolar transistor with nonalloyed graded-gap ohmic contacts to the base and emitter

5. Self-aligned AlGaAs/GaAs HBT with low emitter resistance utilizing InGaAs cap layer

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microstructural stability of ohmic contacts to InxGa1−xN;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-07

2. Thermal Stability of Ohmic Contacts to n-InxGa1−xN;MRS Proceedings;1995

3. Reactions with Silicon;W Tungsten;1993

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