Investigation of stability of GaAs metal/electron/semiconductor field effect transistor gate contacts by high resolution transmission electron microscopy analysis

Author:

Labat N.,Danto Y.,Plano B.,Chambon M.,Dumas J.-M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference7 articles.

1. Transmission Electron Microscopy of VLSI Circuits and Structures;Marcus,1983

2. High resolution electron microscopy of the GaAs/Si3N4 interface produced by multipolar plasma deposition;Ruterana;Appl. Phys. Lett.,1986

3. Lateral protrusions of ohmic contacts to AlGaAs/GaAs MODFET material;Ezis;Electron. Lett.,1987

4. An investigation of high temperature degradation of Ti/Pt/Au Schottky contacts to GaAs FETs using TEM technique;Magistrali,1991

5. Characteristics of Schottky diodes with microcluster interface;Schneider;Appl. Phys. Lett.,1983

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