Author:
Maneux C.,Labat N.,Saysset N.,Touboul A.,Danto Y.,Dangla J.,Launay P.,Dumas J.-M.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. GaAs HBT's for high-speed digital integrated circuit applications;Chang,1993
2. Reliability analysis of microwave GaAs/AlGaAs HBTs with Beryllium and Carbon doped base;Yamada;IEEE MTT-S Digest,1992
3. GaInP-GaAs quasi selfaligned HBT Tehnology;Launay,1994
4. Comprehensive study of AuMn p-type ohmic contact for GaAs/AlGaAs heterojunction bipolar transistor;Dubon-Chevalier;J. Appl. Phys.,1986
5. Investigation on metallic “paths” affecting the operation of IC MESFETs;Dumas,1987
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2 articles.
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