Stability of SnO2 thin films used for photovoltaic devices-Reference-Cited by-同舟云学术

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Stability of SnO2 thin films used for photovoltaic devices

Published:1983 Issue:1 Volume:30 Page:71-73
ISSN:0038-092X
Container-title:Solar Energy
language:en
Short-container-title:Solar Energy

Author:

Advani G.N.,Jordan A.G.

Publisher

Elsevier BV

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment

Reference8 articles.

1. Physical properties of SnO materials;Jarzebski;J. Electrochem. Soc.,1976

2. Photovoltaic properties of In2O3/semiconductor hetereojunction solar cells;Hsu,1978

3. Indium-Tin-Oxide-Silicon heterojunction photovoltaic devices;Mizrah;IEEE Trans. E1. Dev.,1977

4. Transparent gate silicon photodetectors;Schroder;IEEE Trans. El. Dev.,1978

5. Thin films of SnO2 as solid state gas sensors. Submitted for publication to the;Advani;J. Electronic Materials,1979

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrothermal synthesis of surfactant assisted Zn doped SnO2 nanoparticles with enhanced photocatalytic performance and energy storage performance;Journal of Physics and Chemistry of Solids;2020-06

2. Volatile Organic Compounds (VOCs) Response Characteristics of the Hydrothermally Synthesized SnO₂ Nanocapsules;Sensor Letters;2013-09-01

3. Electrical, optical, and structural characterization of arsenic–tin oxidized transparent conducting films;Solar Energy;2012-01

4. Properties of fluorine-doped SnO2 films prepared by the spray pyrolysis technique;Physica Status Solidi (a);1988-04-16

5. Thin films prepared from tetramethyltin;Thin Solid Films;1987-12

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