Indium—Tin—Oxide—Silicon heterojunction photovoltaic devices-Reference-Cited by-同舟云学术

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Indium—Tin—Oxide—Silicon heterojunction photovoltaic devices

Published:1977-04 Issue:4 Volume:24 Page:458-462
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Mizrah T.,Adler D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31762/01478950.pdf?arnumber=1478950

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Low Temperature Annealing on ITO-on-Si Schottky Junction;IEEE Electron Device Letters;2017-04

2. Electrical Properties of ITO/Crystalline-Silicon Contact at Different Deposition Temperatures;IEEE Electron Device Letters;2012-03

3. Properties of Photosensor with Amorphous Si:H/SiOx:H Double-Layer Structure;Japanese Journal of Applied Physics;1992-03-15

4. Semiconducting transparent thin films: their properties and applications;Journal of Materials Science;1984-01

5. Stability of SnO2 thin films used for photovoltaic devices;Solar Energy;1983

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