Photochemistry of photoresists and underlayer materials upon irradiation at 13.5nm
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Chemical Engineering,General Chemistry
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1. Low-energy electron interaction with 2-(trifluoromethyl)acrylic acid, a potential component for EUVL resist material;Physical Chemistry Chemical Physics;2023
2. EUV photofragmentation and oxidation of a polyarylene – Sulfonium resist: XPS and NEXAFS study;Journal of Photochemistry and Photobiology A: Chemistry;2018-09
3. Outgassing and photochemical studies of photosensitive films upon irradiation at 13.5 nm;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-09
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