Photoresists based on bisphenol A derivatives with tert-butyl ester groups for electron beam lithography-Reference-Cited by-同舟云学术

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Photoresists based on bisphenol A derivatives with tert-butyl ester groups for electron beam lithography

Published:2023-03 Issue: Volume:436 Page:114351
ISSN:1010-6030
Container-title:Journal of Photochemistry and Photobiology A: Chemistry
language:en
Short-container-title:Journal of Photochemistry and Photobiology A: Chemistry

Author:

Hu Shengwen,Chen Jinping,Yu Tianjun,Zeng Yi,Guo Xudong,Wang Shuangqing,Yang Guoqiang,Li Yi

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Chemical Engineering,General Chemistry

Reference55 articles.

1. Nanofabrication by electron beam lithography and its applications: a review;Chen;Microelectron. Eng.,2015

2. 3D nanofabrication using controlled-acceleration-voltage electron beam lithography with nanoimprinting technology;Unno;Adv. Opt. Technol.,2019

3. Patterning of Si nanowire array with electron beam lithography for sub-22 nm Si nanoelectronics technology;Sun;Microelectron. Eng.,2013

4. High resolution HSQ nanopillar arrays with low energy electron beam lithography;Guerfi;Microelectron. Eng.,2013

5. Future of multiple-e-beam direct-write systems;Lin;J. Micro/Nanolith. MEMS MOEMS,2012

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