Implantation-doping of diamond with B+, C+, N+ and O+ ions using low temperature annealing
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. Ion-implanted structures and doped layers in diamond
2. n-type semiconducting diamond by means of oxygen-ion implantation
3. The nature of radiation damage in diamond: activation of oxygen donors
4. Molecular-orbital theory of monatomic and diatomic substitutional defects as shallown-type dopants in diamond
5. J.P. Goss, R. Jones, P.R. Briddon, S. Öberg, Diamond Conference, Cambridge, 2000, unpublished.
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