Growth and high temperature performance of semi-insulating silicon carbide
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. General principles of growing large-size single crystals of various silicon carbide polytypes
2. Growth of SiC ingots with high ratea
3. Features of SiC single-crystals grown in vacuum using the LETI method
4. Magnetic circular dichroism and electron spin resonance of the A− acceptor state of vanadium, V3+, in 6H-SiC
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1. Dislocations in 4H silicon carbide;Journal of Physics D: Applied Physics;2022-09-23
2. A review on transition metal doped silicon carbide;Ceramics International;2019-05
3. Lattice location of implanted transition metals in 3C–SiC;Journal of Physics D: Applied Physics;2017-05-03
4. Three-dimensional observation of defects in nitrogen-doped 6H-SiC crystals using a laser scanning confocal microscope;Journal of Materials Science;2011-12-20
5. Nondestructive three-dimensional observation of defects in semi-insulating 6H-SiC single-crystal wafers using a scanning laser microscope (SLM) and infrared light-scattering tomography (IR-LST);Journal of Crystal Growth;2009-07
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