Ozone-treated channel diamond field-effect transistors-Reference-Cited by-同舟云学术

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Ozone-treated channel diamond field-effect transistors

Published:2003-10 Issue:10-11 Volume:12 Page:1971-1975
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Sakai Toshikatsu,Song Kwan-Soup,Kanazawa Hirofumi,Nakamura Yusuke,Umezawa Hitoshi,Tachiki Minoru,Kawarada Hiroshi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Electrical conductivity of nitrogen and argon implanted diamond

2. Photoelectrochemical properties of semiconductor diamond

3. Efficient electrochemical reduction of nitrate to ammonia using conductive diamond film electrodes

4. Selective Electrochemical Detection of Dopamine in the Presence of Ascorbic Acid at Anodized Diamond Thin Film Electrodes

5. Diamond-based glucose sensors

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2. From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices;Journal of Physics: Materials;2024-03-08

3. Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics;Nanomaterials;2024-03-01

4. Enhanced sensitivity of partial O-terminated H-diamond for H2S detection at room temperature;Diamond and Related Materials;2023-12

5. Diamond p-Type Lateral Schottky Barrier Diodes With High Breakdown Voltage (4612 V at 0.01 mA/Mm);IEEE Electron Device Letters;2023-10

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