Hydrogen-related gap states in the near surface of chemical vapor deposited homoepitaxial diamond films-Reference-Cited by-同舟云学术

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Hydrogen-related gap states in the near surface of chemical vapor deposited homoepitaxial diamond films

Published:1997-03 Issue:2-4 Volume:6 Page:303-307
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Hayashi Kazushi,Watanabe Hideyuki,Yamanaka Sadanori,Sekiguchi Takashi,Okushi Hideyo,Kajimura Koji

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film

2. Hydrogen passivation of electrically active defects in diamond

3. Hydrogenating Effect of Single-Crystal Diamond Surface

4. Effect of Ambient on the Surface Resistance of Diamond Films during Cooling after Deposition

5. Electrical properties of Schottky barrier formed on as‐grown and oxidized surface of homoepitaxially grown diamond (001) film

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Covalent molecular functionalization of diamond thin-film transistors;Diamond and Related Materials;2007-08

2. X-ray Excited Optical Luminescence from Diamond Thin Films: The Contribution of sp2- and H-Bonded Carbon to the Luminescence;Journal of the American Chemical Society;2007-01-24

3. Boron-Doped Diamond-Based Sensors: A Review;Sensor Letters;2006-06-01

4. Homoepitaxial diamond growth for the control of surface conductive carrier transport properties;Journal of Applied Physics;2004-10

5. Spontaneous decrease of high surface electrical conductivity in diamond exposed to atmospheric air;Chemical Physics Letters;2004-06

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