The effect of pressure on the band-gap energy in ordered GaInP and AlGaInP grown by MOVPE
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference39 articles.
1. Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature
2. Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasers
3. Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy
4. Atomic Structure of Ordered InGaP Crystals Grown on (001)GaAs Substrates by Metalorganic Chemical Vapor Deposition
5. Ordered structure in OMVPE-grown Ga0.5In0.5P
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mounting-induced strains in red-emitting (Al)InGaP laser diodes tuned by pressure;Applied Physics A;2009-05-06
2. Excitation and pressure effects on low temperature photoluminescence from GaAs/GaInP heterostructures;physica status solidi (b);2004-11
3. Photoluminescence studies of GaAs/partially ordered GaInP quantum wells grown by metalorganic vapor phase epitaxy;physica status solidi (b);2003-02
4. High Pressure Photoluminescence Study of the GaAs/Partially Ordered GaInP Interface;physica status solidi (b);2001-01
5. High-pressure study of deep emission band at GaAs/partially ordered GaInP interface;Journal of Luminescence;2000-05
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