Measurement of surface recombination velocity in silicon by steady-state photoconductance-Reference-Cited by-同舟云学术

Measurement of surface recombination velocity in silicon by steady-state photoconductance

Published:1958-05 Issue:3 Volume:5 Page:171-179
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Bath H.M.,Cutler M.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference12 articles.

1. Electrons and Holes in Semiconductors;Shockley,1950

2. Procedures in Experimental Physics;Strong,1938

3. Procedures in Experimental Physics;Strong,1938

4. Procedures in Experimental Physics;Strong,1938

5. Injected Current Carrier Transport in a Semi‐Infinite Semiconductor and the Determination of Lifetimes and Surface Recombination Velocities

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5. Kinetics of Surface Phenomena in Silicon;Surface Properties of Semiconductors / Poverkhnostnye Svoistva Poluprovodnikov / Поверхностные Своиства Поλупроводников;1964