Scattering of excitons by free carriers in semiconducting quantum well structures: Dependence of scattering cross sections on well width
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
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1. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures
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2. Excitonic photoluminescence quenching by impact ionization of excitons and donors inGaAs/Al0.35Ga0.65Asquantum wells with an in-plane electric field;Physical Review B;2000-12-15
3. Effect of an electric field on the exciton linewidth due to scattering of excitons by ionized impurities in semiconducting quantum well structures;Journal of Applied Physics;1999-10-15
4. Impact ionization of excitons by hot carriers in quantum wells;Semiconductor Science and Technology;1998-11-01
5. Scattering of excitons by free carriers in narrow and wide quantum wells in the presence of a transverse electric field;Solid State Communications;1997-11
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