Excitonic photoluminescence quenching by impact ionization of excitons and donors inGaAs/Al0.35Ga0.65Asquantum wells with an in-plane electric field
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.62.15871/fulltext
Reference35 articles.
1. Lifetime Enhancement of Two-Dimensional Excitons by the Quantum-Confined Stark Effect
2. Optical properties of quantum wells and superlattices under electric fields
3. Effect of an electric field on the luminescence of GaAs quantum wells
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1. Luminescence flashes induced by microwave radiation in undoped GaAs quantum wells;Physical Review B;2009-05-26
2. Mechanism of the effect of the electric field of a surface acoustic wave on the low-temperature photoluminescence kinetics in type-II GaAs/AlAs superlattices;Semiconductors;2007-02
3. Quenching of transient photoluminescence by strong in-plane electric fields in quantum wells;SPIE Proceedings;2003-08-08
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