Initial evolution of the impurity ionization interface in a semiconductor-Reference-Cited by-同舟云学术

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Initial evolution of the impurity ionization interface in a semiconductor

Published:1990-01 Issue:5 Volume:51 Page:453-455
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Harris S.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference9 articles.

1. The diffusion of ionized impurities in semiconductors

2. Introduction to Diffusion in Semiconductors;Tuck,1964

3. A Primer of Diffusion Problems;Ghez,1988

4. Conduction of Heat in Solids;Carslaw,1959

5. One-dimensional Brownian motion with an accumulating boundary: Asymptotic results

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface motion for mass redistribution at small supersaturation;The Journal of Chemical Physics;1990-12-15

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