The diffusion of ionized impurities in semiconductors
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference2 articles.
1. Cunnell F. A., preceding paper.
2. Diffusion in Solids, Liquids, Gases;Jost,1952
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1. Microscopic theory for the diffusive evolution of an isoconcentration surface;Physical Review A;1990-09-01
2. Initial evolution of the impurity ionization interface in a semiconductor;Journal of Physics and Chemistry of Solids;1990-01
3. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures;Journal of Applied Physics;1988-12-15
4. Mechanisms of atomic diffusion in the III-V semiconductors;Journal of Physics D: Applied Physics;1985-04-14
5. Thermodynamic and kinetic properties of indium-implanted silicon II: High temperature diffusion in an inert atmosphere;Thin Solid Films;1983-03
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