Electronic structure of the reconstructed InP(100) surface
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference20 articles.
1. Surface characterisation of indium phosphide
2. Auger electron beam effects on electrical properties and surface composition of InP surfaces
3. Chemical and morphological aspects of the build-up of the interface between InP(100) and column III metal overlayers
4. Electronic properties of the InP(100) surface
5. The formation of the GaInP(100) interface
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On the theory of electron transfer reactions at semiconductor electrode/liquid interfaces;The Journal of Chemical Physics;2000-02-15
2. P-terminated InP(100) surface studied using a first-principles energy-minimization approach;Physical Review B;1998-09-15
3. Angle-resolved photoelectron spectroscopy study of theInP(100)−(2×4)surface electronic structure;Physical Review B;1998-04-15
4. InP(100)-(2 × 4) surface electronic structure studied by angle-resolved photoelectron spectroscopy;Journal of Electron Spectroscopy and Related Phenomena;1998-03
5. Tight-binding modelling of materials;Reports on Progress in Physics;1997-12-01
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