GaN layer growth optimization for high power devices
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference23 articles.
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4. Effects of Al component content on optoelectronic properties of Al x Ga 1− x N;Chinese Physics B;2018-10
5. A comparative ab intio study on structural evolution, stability and electronic properties of undoped and Al-doped GaxNy ( x + y = 4-25 clusters;The European Physical Journal Plus;2017-07
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