Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) from 3D islands and lateral overgrowth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. The Blue Laser Diode–GaN based Light Emitters and Lasers;Shuji Nakamura,1997
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4. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
5. Morphological and Structural Transitions in GaN Films Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
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