Dislocation and kink motion study in the bulk SiGe alloy single crystals-Reference-Cited by-同舟云学术

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Dislocation and kink motion study in the bulk SiGe alloy single crystals

Published:1997-08 Issue: Volume:234-236 Page:735-738
ISSN:0921-5093
Container-title:Materials Science and Engineering: A
language:en
Short-container-title:Materials Science and Engineering: A

Author:

Abrosimov N.V.,Alex V.,Dyachenko-Dekov D.V.,Iunin Yu.L.,Nikitenko V.I.,Orlov V.I.,Rossolenko S.N.,Schröder W.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Theory of Dislocation Mobility in Semiconductors

2. Dislocation dynamics in disordered crystals with high peierls barriers

3. Experimental study of the double kink formation kinetics and kink mobility on the dislocation line in Si single crystals

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. XFEM simulation of dislocation in SixGe1-x alloy under thermal loads;Procedia Structural Integrity;2022

2. Glide Mobility of a-Type Edge Dislocations in Aluminum Nitride by Molecular Dynamics Simulation;ACS Omega;2021-12-13

3. Irradiation-induced defects in SiGe;Materials Science and Engineering: B;2008-12

4. X-ray Studies of Si[sub 1 – ][sub x]Ge[sub x] Single Crystals;Physics of the Solid State;2005

5. Dislocation Core Effects on Mobility;Dislocations in Solids;2004

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