Interfacial adhesion strength of III-N heterostructures-Reference-Cited by-同舟云学术

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Interfacial adhesion strength of III-N heterostructures

Published:2022-01 Issue: Volume:213 Page:110319
ISSN:0264-1275
Container-title:Materials & Design
language:en
Short-container-title:Materials & Design

Author:

Walter Thomas^ORCID,Zareghomsheh Mohammad,Khatibi Golta,Popok Vladimir N.^ORCID,Kristensen Peter K.^ORCID,Boturchuk Ievgen,Schwarz Sabine

Funder

Innovationsfonden

Research and Innovation

Österreichische Nationalstiftung für Forschung, Technologie und Entwicklung

Christian Doppler Forschungsgesellschaft

Bundesministerium für Digitalisierung und Wirtschaftsstandort

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference47 articles.

1. A survey of wide bandgap power semiconductor devices;Millan;IEEE Trans. Power Electron.,2014

2. A comprehensive review of recent progress on GaN high electron mobility transistors: Devices, fabrication and reliability;Zeng;Electron.,2018

3. K. Ahi, Review of GaN-based devices for terahertz operation, Opt. Eng. 56 (2017) 1. https://doi.org/10.1117/1.oe.56.9.090901.

4. Substrates for epitaxy of gallium nitride: New materials and techniques;Kukushkin;Rev. Adv. Mater. Sci.,2008

5. Structural characterization of MOVPE grown AlGaN/GaN for HEMT formation;Popok;Rev. Adv. Mater. Sci.,2018

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1. Cross-sectional Nanoindentation: Applicability for testing Polyimide adhesion in semiconductor components;2023 46th International Spring Seminar on Electronics Technology (ISSE);2023-05-10

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