Unipolar resistive switching effect and mechanism of solution-processed spinel Co3O4 thin films-Reference-Cited by-同舟云学术

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Unipolar resistive switching effect and mechanism of solution-processed spinel Co3O4 thin films

Published:2016-08 Issue: Volume:103 Page:230-235
ISSN:0264-1275
Container-title:Materials & Design
language:en
Short-container-title:Materials & Design

Author:

Hu Wei^ORCID,Zou Lilan,Lin Xiaogang,Gao Chao,Guo Yongcai,Bao Dinghua

Funder

Chongqing Research Program of Basic Research and Frontier Technology

Fundamental Research Funds for the Central Universities

Natural Science Foundation of China

National Basic Research Program (973 Program) of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference33 articles.

1. Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges;Waser;Adv. Mater.,2009

2. Recent progress in resistive random access memories: materials, switching mechanisms, and performance;Pan;Mater. Sci. Eng. R,2014

3. Bipolar resistive switching in polycrystalline TiO2 films;Tsunoda;Appl. Phys. Lett.,2007

4. The evolution of conducting filaments in forming-free resistive switching Pt/TaOx/Pt structures;Kurnia;Appl. Phys. Lett.,2013

5. Conduction mechanism of TiN/HfOx/Pt resistive switching memory: a trap-assisted-tunneling model;Yu;Appl. Phys. Lett.,2011

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