Effects of Y and Ho doping on microstructure evolution during oxidation of extraordinary stable Hf-B-Si-Y/Ho-C-N films up to 1500 °C-Reference-Cited by-同舟云学术

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Effects of Y and Ho doping on microstructure evolution during oxidation of extraordinary stable Hf-B-Si-Y/Ho-C-N films up to 1500 °C

Published:2024-01 Issue: Volume:237 Page:112589
ISSN:0264-1275
Container-title:Materials & Design
language:en
Short-container-title:Materials & Design

Author:

Jiang J.C.,Shen Y.^ORCID,Zeman P.^ORCID,Procházka M.^ORCID,Vlček J.,Meletis E.I.^ORCID

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference50 articles.

1. Microstructure of high temperature oxidation resistant Hf6B10Si31C2N50 and Hf7B10Si32C2N44 films;Shen;Coatings,2020

2. Borides in thin film technology;Mitterer;J. Solid State Chem.,1997

3. Mechanical, thermal, and oxidation properties of refractory hafnium and zirconium compounds;Opeka;J. Eur. Ceram. Soc.,1999

4. °C+ hypersonic aerosurfaces: theoretical;Opeka;J. Mater. Sci.,2000

5. Oxidation of ZrB2- and HfB2-based ultra-high temperature ceramics: effect of Ta additions;Opila;J. Mater. Sci.,2004

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