Formation of Zn- and O- vacancy clusters in ZnO through deuterium annealing-Reference-Cited by-同舟云学术

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Formation of Zn- and O- vacancy clusters in ZnO through deuterium annealing

Published:2017-10 Issue: Volume:69 Page:23-27
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Johansen K.M.,Tuomisto F.,Makkonen I.,Vines L.

Funder

Research Council of Norway

Norwegian Micro- and Nano-Fabrication Facility

Academy of Finland

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference43 articles.

1. Native point defects in ZnO;Janotti;Phys. Rev. B,2007

2. H and li related defects in ZnO and their effect on electrical properties;Björheim;J. Phys. Chem. CC,2012

3. Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation;Knutsen;Phys. Rev. B,2012

4. ESR of electron irradiated ZnO confirmation of the F+ center;Smith;Phys. Lett. A,1970

5. Zinc-vacancydonor complex: a crucial compensating acceptor in ZnO;Stehr;Phys. Rev. Appl.,2014

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