Forward and reverse current aging of GaN-based light-emitting diodes fabricated with Ag-based reflective electrodes
Author:
Funder
Samsung Research Funding Center of Samsung Electronics
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference30 articles.
1. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
2. High-Power GaN P-N Junction Blue-Light-Emitting Diodes
3. High-power AlGaInN flip-chip light-emitting diodes
4. Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry
5. GaInN light-emitting diodes with RuO2/SiO2/Ag omni-directional reflector
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1. Improving the External Quantum Efficiency of High-Power GaN-Based Flip-Chip LEDs by Using Sidewall Composite Reflective Micro Structure;Micromachines;2021-09-04
2. Enhanced optical output power of AlGaN/GaN ultraviolet light-emitting diodes fabricated with breakdown induced conductive channels;J CERAM PROCESS RES;2020
3. Effects of Current and Temperature Stress on Reliability of LED Bulbs;Laser & Optoelectronics Progress;2019
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