Mg-doped β-Ga2O3 films with tunable optical band gap prepared on MgO (110) substrates by metal-organic chemical vapor deposition-Reference-Cited by-同舟云学术

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Mg-doped β-Ga2O3 films with tunable optical band gap prepared on MgO (110) substrates by metal-organic chemical vapor deposition

Published:2015-06 Issue: Volume:34 Page:52-57
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Feng Xianjin,Li Zhao,Mi Wei,Luo Yi,Ma Jin

Funder

National Natural Science Foundation of China

Shandong Provincial Natural Science Foundation, China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference30 articles.

1. Polymorphism of Ga2O3 and the System Ga2O3—H2O

2. Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor

3. Surface morphology of homoepitaxial β-Ga2O3 thin films grown by molecular beam epitaxy

4. Synthesis of β-Ga2O3 nanowires through microwave plasma chemical vapor deposition

5. Recent progress in transparent oxide semiconductors: Materials and device application

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1. Strain alleviation and light emission improvement of indium-doped β-Ga2O3 films;Journal of Luminescence;2024-09

2. Characteristics of 4-inch (100) oriented Mg-doped β-Ga2O3 bulk single crystals grown by a casting method;Journal of Alloys and Compounds;2024-06

3. Simultaneous drive-in of Mg and disassociation of Mg-H complex in Ga2O3 by oxygen annealing achieving remarkable current blocking;Applied Physics Letters;2024-05-20

4. Effect of tin source temperature on the β-Ga2O3 film deposited by MOCVD;Materials Science and Engineering: B;2024-04

5. Influence of Oxygen on Ga₂O₃ Deposition at Low Temperature by MOCVD;Crystal Growth & Design;2023-12-18

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