Tuning the analog and digital performance of Germanene nanoribbon field effect transistors with engineering the width and geometry of source, channel and drain region in the ballistic regime-Reference-Cited by-同舟云学术

Tuning the analog and digital performance of Germanene nanoribbon field effect transistors with engineering the width and geometry of source, channel and drain region in the ballistic regime

Published:2018-06 Issue: Volume:80 Page:18-23
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

nejad Hossein Fatholah,Dideban Daryoosh,Ketabi Abbas,Vali Mehran,Bayani Amir Hossein,Heidari Hadi

Funder

University of Kashan

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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