Crystalline phase dependent electrical properties of Mg incorporated tetragonal phase stabilized ZrO2 high-κ dielectric layer in Si based MOS capacitors-Reference-Cited by-同舟云学术

Crystalline phase dependent electrical properties of Mg incorporated tetragonal phase stabilized ZrO2 high-κ dielectric layer in Si based MOS capacitors

Published:2018-07 Issue: Volume:81 Page:7-16
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Bhanu J. Udaya^ORCID,Amutha A.,Babu G. Ramesh,Sundaravel B.,Thangadurai P.

Funder

DST-SERB

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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4. High-quality high-k HfON formed with plasma jet assisted PVD process and application as tunnel dielectric for flash memories;Liu;Microelectron. Eng.,2008

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